Samsung - DDR5
module | 8 GB | SO-DIMM 262-pin | 5600 MHz | CL40 | 1.1 V | unbuffered
MPN
M425R1GB4PB0-CWM
Manufacturer
Samsung
QuickCode
1691645
Qty immediately available
0
Total stock
0
£11,999.99
inc VAT
£9,999.99 ex
VAT
This item is out of stock
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Delivery
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3 Working Days£4.98
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Main Specification
| Product Description | Samsung - DDR5 - module - 8 GB - SO-DIMM 262-pin - 5600 MHz - unbuffered |
|---|---|
| Product Type | Memory module |
| Capacity | 8 GB |
| Memory Type | DDR5 SDRAM - SO-DIMM 262-pin |
| Upgrade Type | Generic |
| Speed | 5600 MHz |
| Latency Timings | CL40 |
| Features | Single rank, unbuffered |
| Voltage | 1.1 V |
General
| Capacity | 8 GB |
|---|---|
| Upgrade Type | Generic |
Memory
| Type | DRAM memory module |
|---|---|
| Technology | DDR5 SDRAM |
| Form Factor | SO-DIMM 262-pin |
| Speed | 5600 MHz |
| Latency Timings | CL40 |
| Features | Single rank, unbuffered |
| Chips Organization | X16 |
| Voltage | 1.1 V |
Product features
Efficient performance
The Samsung memory module utilizes DDR5 SDRAM technology, providing improved speeds and bandwidth over previous generations, enhancing overall system efficiency.Low power consumption
At a supply voltage of just 1.1 V, this RAM module maximizes battery life in portable devices while delivering performance.Easy installation
The 262-pin SO-DIMM form factor allows for quick upgrades in compatible laptops and compact systems without complicated setups.High capacity and speed
With 8 GB of storage and a memory speed of 5600 MHz, this module is designed to handle intensive applications, enabling seamless multitasking.Reliable stability
The unbuffered memory structure enhances reliability and stability, making it suitable for personal and professional usage in a variety of scenarios.Key selling points
- Memory speed of 5600 MHz
- Efficient 1.1 V power consumption
- Compatible with SO-DIMM slots
- Single rank unbuffered design
- Capacity of 8 GB for multitasking
References
MPN: M425R1GB4PB0-CWM
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